Work

Doping Dependence of the Raman Spectrum of Defected Graphene

Year: 2014

Type: article

Abstract: We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7 eV, as directly monitored by in situ Hall-effect measurements. For a given number of defects, we find that the intensities of the D and D' peaks decrease with increasing doping. We assign this to an increased total scattering rate of the photoexcited electrons and holes, due to the doping-dependent strength of electron-electron scattering. We present a general relation between D peak intensity and defects valid for any doping level.

Source: ACS Nano

DOI: 10.1021/nn502676g

Authors: Matteo Bruna, Anna K. Ott, Mari Ijäs, Duhee Yoon, Ugo Sassi, Andrea C. Ferrari

Institution: University of Cambridge

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: Graphene Flagship, Engineering and Physical Sciences Research Council

Awards: Graphene Flexible Electronics and Optoelectronics, EPSRC Centre for Doctoral Training in Graphene Technology, G5657833652, G5849335364, Graphene Flexible Electronics and Optoelectronics: Bridging The Gap Between Academia and Industry