Work

Fabrication of memristors with poly-crystalline silicon nanowires

Year: 2009

Type: conference-paper

Abstract: Memristors are the two-terminal components that complete the symmetry between the fundamental circuit variables, and they are highly suitable for bioinspired and neuralnetwork-based computational systems due to their inherent memory effect. In this paper we present a fabrication technique that uses only Complementary Metal Oxide Semiconductor (CMOS) processing steps and conventional photolithography,yielding poly-crystalline silicon nanowires that show a memristive behavior. Besides measurements, we performed numerical device simulations that address the observed memristive effect.

Source: Infoscience (Ecole Polytechnique Fédérale de Lausanne)

Authors: M. Haykel Ben Jamaa, Sandro Carrara, Julius Georgiou, Nikolaos Archontas, Giovanni De Micheli

Institutions: École Polytechnique Fédérale de Lausanne, University of Cyprus, Democritus University of Thrace

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: École Polytechnique Fédérale de Lausanne

OpenAlex ID: W2119308394

FWCI: 3.279

Cites: 10

Cited by: 16

Related to: 10