Work

Modeling boron diffusion in ultrathin nitrided oxide p/sup +/ Si gate technology

Year: 1997

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/55.585342

Author: R.B. Fair

Institution: Duke University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2119913308

FWCI: 2.508

Cites: 12

Cited by: 10

Related to: 10