Work

Tight binding modeling of electronic properties of III‐V based heterostructures

Year: 2011

Type: article

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.201000798

Authors: Özden Akıncı, H. Hakan Gürel, Hilmi Ünlü

Institutions: Istanbul Technical University, International University of Sarajevo

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2120219643

FWCI:

Cites: 5

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Related to: 10