Work

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

Year: 2006

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2006.881054

Authors: Y. Cai, Y. Zhou, K.M. Lau, K.J. Chen

Institution: Hong Kong University of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2120465859

FWCI: 12.84

Cites: 40

Cited by: 555

Related to: 10