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An overview of the electronic properties of InAs sub 1-x Sb sub x strained-layer superlattices (0 le times le 1)

Year: 1991

Type: article

Abstract: There have been few attempts to "bandgap engineer'' In(AsSb) semiconductors although In(AsSb) alloys have the smallest bandgaps and effective masses among the III-V semiconductors. In(AsSb) may prove useful for high speed devices, and this system is an obvious starting point to extend the optical response of III-V semiconductors to longer wavelength for infrared detectors and lasers. In this paper we summarize studies of the electronic and optical properties of In(AsSb) strained-layer superlattices (SLSs) for a wide range of compositions. Previously, long wavelength infrared response was observed at low As content in these SLSs, and we concluded that a type II (or staggered) band offset occurs in the In(AsSb) system. Prototype infrared detectors have been fabricated from these structures.

Source: OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)

Authors: S. R. Kurtz, R M Biefeld, L. R. Dawson, Barney L. Doyle

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W212097363

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