Work

Spin-polarized injection into a p-type GaAs layer from a Co2MnAl injector

Year: 2013
Type: article
Abstract: Electric luminescence and its circular polarization in a Co 2 MnAl injector-based light emitting diode (LED) has been detected at the transition of e−A 0 C , where injected spin-polarized electrons recombine with bound holes at carbon acceptors. A spin polarization degree of 24.6% is obtained at 77 K after spin-polarized electrons traverse a distance of 300 nm before they recombine with holes bound at neutral carbon acceptors in a p + -GaAs layer. The large volume of the p + -GaAs layer can facilitate the detection of weak electric luminescence (EL) from e−A 0 C emission without being quenched at higher bias as in quantum wells. Moreover, unlike the interband electric luminescence in the p + -GaAs layer, where the spin polarization of injected electrons is destroyed by a very effective electron—hole exchange scattering (BAP mechanism), the spin polarization of injected electrons seems to survive during their recombination with holes bound at carbon acceptors.
Language: English
Open Access status: bronze
OpenAlex ID: W2120975936
FWCI: 0.515
Cites: 9
Cited by: 5
Related to: 10