Work

Few-electron semiconductor quantum dots with Gaussian confinement

Year: 2008

Type: article

Abstract: We have performed Hartree-Fock calculations of the electronic structure of N ≤ 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is V 0 R 2. Such a feature arises from widely valid scaling properties of the confining potential. Gaussian Quantum dots having N = 2, 5, and 8 electrons are particularly stable in agreement with the Hund rule. The shell structure becomes less and less noticeable as the well radius increases.

Source: Open Physics

DOI: 10.2478/s11534-008-0132-z

Authors: Sergio Gomez, Rodolfo Romero

Institutions: Consejo Nacional de Investigaciones Científicas y Técnicas, Centro Científico Tecnológico - Nordeste, National University of the Northeast

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $1,356

Funders: Consejo Nacional de Investigaciones Científicas y Técnicas, Universidad Nacional del Nordeste, Agencia Nacional de Promoción Científica y Tecnológica