Performance limiting micropipe defects in silicon carbide wafers
Year: 1994
Type: article
Abstract: Reports on the characteristics of a major defect in mass-produced silicon carbide wafers which severely limits the performance of silicon carbide power devices. Micropipe defects originating in 4H- and 6H-SiC substrates were found to cause pre-avalanche reverse-bias point failures in most epitaxially-grown pn junction devices of 1 mm/sup 2/ or larger in area. Until such defects are significantly reduced from their present density (on the order of 100's of micropipes/cm/sup 2/), silicon carbide power device ratings will be restricted to around several amps or less.>
Source: IEEE Electron Device Letters
DOI: 10.1109/55.285372
Authors: P.G. Neudeck, J.A. Powell
Institution: Glenn Research Center
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2121604213