Work

Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111)

Year: 2012

Type: article

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.201100043

Authors: Daniel H. Rich, Ofer Moshe, Benjamin Damilano, Jean Massies

Institutions: Ben-Gurion University of the Negev, Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2123245243

FWCI:

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