Work

High-Q integrated inductors on trenched silicon islands

Year: 2005

Type: conference-paper

Abstract: An implementation of high quality factor (Q) copper (Cu) inductors on CMOS-grade silicon substrates using a fully CMOS-compatible process is presented. A low-temperature fabrication sequence is employed to reduce the loss of Si wafers at RF frequencies using micromachining technique. This method does not require air suspension of the inductors, resulting in mechanically-robust structures that are compatible with any packaging technology. An InH inductor fabricated on this low-loss micromachined Si substrate exhibits a high peak Q of 51 at 1.0GHz (40 at 2.4GHz) with a self-resonant frequency larger than 10GHz.

Source: IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

DOI: 10.1109/memsys.2005.1453901

Authors: M. Raieszadeh, P. Monajemi, Sang-Woong Yoon, J. Laskar, F. Ayazi

Institution: Georgia Institute of Technology

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: green

Funders: National Science Foundation, Georgia Institute of Technology