Work

Trapping effects in GaN and SiC microwave FETs

Year: 2002

Type: article

Source: Proceedings of the IEEE

DOI: 10.1109/jproc.2002.1021569

Authors: S.C. Binari, P.B. Klein, T.E. Kazior

Institutions: United States Naval Research Laboratory, Raytheon (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Yale University, U.S. Naval Research Laboratory

OpenAlex ID: W2124985289

FWCI: 11.31

Cites: 68

Cited by: 484

Related to: 10