Work

The formation of the Schottky barrier at the V/Si interface

Year: 1982

Type: article

Source: Journal of Vacuum Science and Technology

DOI: 10.1116/1.571628

Authors: J. G. Clabes, G. W. Rubloff, B. Reihl, R. J. Purtell, P. S. Ho, A. Zartner, F. J. Himpsel, D. E. Eastman

Institutions: Leibniz University Hannover, IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2125940269

FWCI: 4.72

Cites: 14

Cited by: 38

Related to: 10