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InGaAs quantum well diode lasers with regrown Al containing layers for application to current confinement structures

Year: 2002

Type: conference-paper

Source: IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)

DOI: 10.1109/leos.1997.645551

Authors: Won-Jin Choi, P.D. Dapkus, Sangmok Lee, D. Rich

Institution: University of Southern California

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2126068550

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Cites: 3

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Related to: 10