Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs
Year: 2000
Type: article
Source: IEEE Electron Device Letters
DOI: 10.1109/55.863106
Authors: Sang-Hyun Oh, D. Monroe, J.M. Hergenrother
Institution: Alcatel-Lucent (France)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2126174276