Work

Unified model of boron diffusion in thin gate oxides: effects of F, H/sub 2/, N, oxide thickness and injected Si interstitials

Year: 2002

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.1995.497188

Author: R.B. Fair

Institution: Duke University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2126265909

FWCI: 0.356

Cites: 8

Cited by: 7

Related to: 10