Work

Molecular Doping of Multilayer ${\rm MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances

Year: 2013

Type: article

Abstract: For the first time, polyethyleneimine (PEI) doping on multilayer MoS2field-effect transistors is investigated. A 2.6 times reduction in sheet resistance and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON-current and 50% improvement in extrinsic field-effect mobility. The threshold voltage confirms a negative shift upon the molecular doping. All studies demonstrate the feasibility of PEI molecular doping in MoS2transistors and its potential applications in layer-structured semiconducting 2-D crystals.

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2013.2277311

Authors: Yuchen Du, Han Liu, Adam T. Neal, Mengwei Si, Peide D. Ye

Institution: Purdue University West Lafayette

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: National Science Foundation, Semiconductor Research Corporation, Division of Civil, Mechanical and Manufacturing Innovation

Awards: SNM: Scalable Nanomanufacturing Machine Based on Parallel Optical Antenna Array, G6279869207