Work

Recombination Activity and Impact of the Boron–Oxygen-Related Defect in Compensated N-Type Silicon

Year: 2011

Type: article

Source: IEEE Journal of Photovoltaics

DOI: 10.1109/jphotov.2011.2165698

Authors: F. E. Rougieux, M. Forster, D. Macdonald, A. Cuevas, B. Lim, J. Schmidt

Institutions: Australian National University, Institut für Solarenergieforschung

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2127634192

FWCI: 0.876

Cites: 16

Cited by: 25

Related to: 10