Observation of stimulated Raman amplification in silicon waveguides
Year: 2003
Type: article
Abstract: We report the first observation of Stimulated Raman Scattering (SRS) in silicon waveguides. Amplification of the Stokes signal, at 1542.3 nm, of up to 0.25 dB has been observed in Silicon-on-Insulator (SOI) waveguides, using a 1427 nm pump laser with a CW power of 1.6 W, measured before the waveguide. Two-Photon-Absorption (TPA) measurements on these waveguides are also reported, and found to be negligible at the pump power where SRS was observed.
Source: Optics Express
DOI: 10.1364/oe.11.001731
Authors: R. Claps, D. Dimitropoulos, V. Raghunathan, Y. Han, B. Jalali
Institution: University of California, Los Angeles
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
OpenAlex ID: W2127707183