Work

High performance fully-depleted tri-gate CMOS transistors

Year: 2003

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2003.810888

Authors: B.S. Doyle, S. Datta, M. Doczy, S. Hareland, B. Jin, J. Kavalieros, T. Linton, A. Murthy, R. Rios, R. Chau

Institution: Intel (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2128762553

FWCI: 34.61

Cites: 10

Cited by: 463

Related to: 10