Work

The Si-SiO 2 Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

Year: 1967

Type: article

Source: Bell System Technical Journal

DOI: 10.1002/j.1538-7305.1967.tb01727.x

Authors: E. H. Nicollian, A. Goetzberger

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2128922073

FWCI: 38.36

Cites: 30

Cited by: 1,879

Related to: 10