Measurement of the ionization rates in diffused silicon p-n junctions
Year: 1970
Type: article
Source: Solid-State Electronics
Authors: R. Van Overstraeten, H. De Man
Institutions: UCLouvain, KU Leuven
Language: English
Subfield: Nuclear and High Energy Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2128923591
