A Program Disturb Model and Channel Leakage Current Study for Sub-20 nm nand Flash Cells
Year: 2010
Type: article
Authors: Alessandro Torsi, Yijie Zhao, Haitao Liu, Toru Tanzawa, Akira Goda, Pranav Kalavad, Krishna Parat
Institutions: Micron (United States), Micron (Japan), Intel (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Micron Technology
OpenAlex ID: W2129573338