Work

Interfacial Microstructure and Carrier Conduction Process in Pt/Ti Ohmic Contact to P-In0.53Ga0.47As Formed by Rapid Thermal Processing

Year: 1990

Type: article

Source: MRS Proceedings

DOI: 10.1557/proc-181-389

Authors: S.N.G. Chu, A. Katz, T. Boone, P.M. Thomas, V.G. Riggs, W.C. Dautremont-Smith, W.D. Johnson

Institution: AT&T (United States)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2130180337

FWCI:

Cites: 20

Cited by: 1

Related to: 10