Work

Low-voltage polymer field-effect transistors for nonvolatile memories

Year: 2005

Type: article

Abstract: We demonstrate organic nonvolatile memories based on transistors, made from spin-coated polymers, that have programming voltages of 15V and good data retention capabilities. The low-voltage programmable ferroelectric field-effect transistors were obtained by an optimized ferroelectric polymer deposition method using cyclohexanone as a solvent from which films can be obtained that are thin, smooth and defect free. The data retention characteristics were measured for 3h under constant read conditions. Extrapolation predicts that the data retention capability exceeds 10years.

Source: Applied Physics Letters

DOI: 10.1063/1.2132062

Authors: R. C. G. Naber, B. de Boer, P. W. M. Blom, D. M. de Leeuw

Institution: University of Groningen

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funder: Nederlandse Organisatie voor Wetenschappelijk Onderzoek

OpenAlex ID: W2131871580