Year: 2002
Type: conference-paper
Abstract: This paper reports on the fabrication and characterization of single crystal silicon (SCS) in-plane capacitive resonators with submicron gap spacing using the HARPSS process.The resonating element is made out of single crystal silicon and the drive and sense electrodes are made out of trench-refilled polysilicon, hence yielding an all-silicon microresonator with potentially better temperature and long-term stability.The capacitive gap is defined by a sacrificial oxide layer, which can be potentially reduced to the ten's of nanometer range (700nm reported in this paper).Quality factor as high as 67,000 was measured in 1mTorr vacuum for the 40kHz fundamental resonance frequency of a clamped-clamped beam SCS HARPSS resonator.A 510µm long, 5.5µm wide, 20µm thick clamped-clamped beam resonator was operated in its third resonance mode at 1MHz and demonstrated a Q of 11,000 under vacuum.Electrostatic tuning characteristics of the resonators have been measured and reported.
Authors: S.Y. No, A. Hashimura, S. Pourkamali, F. Ayazi
Institution: Georgia Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2132681479