Work

High Work-Function Metal Gate and High- $kappa$ Dielectrics for Charge Trap Flash Memory Device Applications

Year: 2005

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2005.859691

Authors: S. Jeon, J.H. Han, J.H. Lee, S. Choi, H. Hwang, C. Kim

Institutions: Samsung (South Korea), Samsung Advanced Institute of Technology (South Korea), Gwangju Institute of Science and Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2134330702

FWCI: 0.922

Cites: 20

Cited by: 44

Related to: 10