Work

Modeling of Leakages in Nano-Scale DG MOSFET to Implement Low Power SRAM: A Device/Circuit Co-Design

Year: 2007

Type: conference-paper

Source: International Conference on VLSI Design

DOI: 10.1109/vlsid.2007.110

Authors: Deblina Sarkar, Samiran Ganguly, Deepanjan Datta, A. A. P. Sarab, Sudeb Dasgupta

Institutions: Indian Institute of Technology Dhanbad, Indian Institute of Technology Roorkee

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2134487315

FWCI: 0.502

Cites: 14

Cited by: 1

Related to: 10