Systematic Study Related to the Role of Initial Impurities and Irradiation Rates in the Formation and Evolution of Complex Defects in Silicon for Detectors in HEP Experiments*
Work
Year: 2004
Type: article
Abstract: The influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation, characteristic to high energy physics experiments, is inves... more
Source: Physica Scripta
Authors S. Lazanu, I. Lazanu
Cites: 48
Cited by: 12
Related to: 10
FWCI: 2.018
Citation percentile (by year/subfield): 75.38
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green