Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/
Year: 1988
Type: article
Source: IEEE Electron Device Letters
DOI: 10.1109/55.20406
Authors: Y. Nishioka, E.F. Da Silva, Y. Wang, T.-P. Ma
Institutions: Yale University, Hitachi (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2136138725