Work

Monolithic integration of a transverse-junction stripe laser and metal-semiconductor field-effect transistors on a semi-insulating GaAs substrate

Year: 1987

Type: article

Source: Electronics Letters

DOI: 10.1049/el:19870368

Authors: J. Ohta, K. Kuroda, K. Mitsunaga, K. Kyuma, K. Hamanaka, T. Nakayama

Institutions: Mitsubishi Electric (Japan), Mitsubishi Electric (Germany)

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2136178562

FWCI: 1.029

Cites:

Cited by: 3

Related to: 10