Work

Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs

Year: 2008

Type: article

Abstract: We present an atomistic 3-D simulation study of the performance of graphene-nanoribbon (GNR) Schottky-barrier field-effect transistors (SBFETs) and transistors with doped reservoirs (MOSFETs) by means of the self-consistent solution of the Poisson and Schrodinger equations within the nonequilibrium Green's function (NEGF) formalism. Ideal MOSFETs show slightly better electrical performance for both digital and terahertz applications. The impact of nonidealities on device performance has been investigated, taking into account the presence of single vacancy, edge roughness, and ionized impurities along the channel. In general, MOSFETs show more robust characteristics than SBFETs. Edge roughness and single-vacancy defect largely affect the performance of both device types.

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2008.928021

Authors: Youngki Yoon, G. Fiori, Seokmin Hong, G. Iannaccone, Jing Guo

Institutions: University of Florida, University of Pisa, Purdue University West Lafayette

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2136361956

FWCI: 5.755

Cites: 31

Cited by: 188

Related to: 10