Work

The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene

Year: 2010

Type: article

Source: ACS Nano

DOI: 10.1021/nn1010914

Authors: Martin Kalbac, Alfonso Reina-Cecco, Hootan Farhat, Jing Kong, Ladislav Kavan, Mildred S. Dresselhaus

Institutions: Czech Academy of Sciences, Heyrovsky Institute, Massachusetts Institute of Technology

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2136979982

FWCI: 7.137

Cites: 23

Cited by: 278

Related to: 10