Work

InGaAs/InP heterojunction bipolar transistors grown with gas source molecular beam epitaxy

Year: 2003

Type: conference-paper

Source: IEEE/LEOS Summer Topical Meetings

DOI: 10.1109/iciprm.1992.235670

Authors: S.A. Feld, K.M. Geib, F.R. Beyette, X. An, M.J. Hafich, G.Y. Robinson, C.W. Wilmsen

Institution: Colorado State University

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2138006800

FWCI:

Cites: 15

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Related to: 10