Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films
Year: 2009
Type: article
Source: IEEE Electron Device Letters
Authors: M.A. Panzer, M. Shandalov, J.A. Rowlette, Y. Oshima, Yi Wei Chen, P.C. McIntyre, K.E. Goodson
Institution: Stanford University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2138421559