On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
Year: 1994
Type: article
DOI: 10.1109/16.337449
Authors: S. Takagi, A. Toriumi, M. Iwase, H. Tango
Institutions: Stanford University, Toshiba (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2139424966