Work

Emerging gallium nitride based devices

Year: 1995

Type: article

Source: Proceedings of the IEEE

DOI: 10.1109/5.469300

Authors: S.N. Mohammad, A.A. Salvador, H. Morkoc

Institutions: University of Illinois Urbana-Champaign, University of Illinois System

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2141493987

FWCI: 30.26

Cites: 181

Cited by: 617

Related to: 10