Barrier and Resonance Scattering of Bi2Te3-Based Compounds
Year: 1999
Type: article
Abstract: At the present time the elaboration of thermoelectrical (TE) materials with improved properties by using metalloceramic technology has attracted considerable attention. The electrophysical properties of the TE materials change due to selective scattering of charge carriers on barriers formed on intercrystalline's boundaries The potential barriers could be approached by different ways. One way is to decrease the grain size. The electrophysical propenies of TE materials based on Bi 2 Te 3 , manufactured by the different powder methods (metalloceramic, extruded) and having different grain size are compared with properties of single crystals grown by Czohralsky method. Another way is to find and to use the impurity creating resonance levels. The influence of doping with Sn atoms on electrophysical properties of Bi 2 Te 3 is investigated also. It is assumed that its unusual properties can be explained by the fact that Sn are situated not only on Tel or Te2 lattice position but are in interplane positions between quintets of Bi 2 Te 3 and create the resonant level.
Source: Materials science forum
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2142193127