Beating in the RHEED Intensity Oscillationsduring Surfactant Mediated GaAsMolecular Beam Epitaxy: Process Physicsand Modeling
Year: 1998
Type: article
Abstract: In a recent work, beating in the reflection high energy electron diffraction (RHEED) intensity oscillations were observed during molecular beam epitaxial (MBE) growth of GaAs with Sn as a surfactant. The strength of beating is found to be dependent on the Sn submonolayer coverage with strong beating observed for 0.4 monolayer coverage. For a fixed temperature and flux ratio (Ga to As), the period of oscillation decreases with increasing Sn coverage. In this work, we have developed a rate equation model of growth to investigate this phenomenon. In our model, the GaAs covered by the Sn is assumed to grow at a faster rate compared to the GaAs not covered by Sn. Assuming that the electron beams reflected from the Sn covered surface and the rest of the surface are incoherent, the results of the dependence of the RHEED oscillations on Sn submonolayer coverages for various Sn coverages were obtained and compared with experimental data and the agreement is good.
Source: VLSI design
DOI: 10.1155/1998/70460
Authors: Vamsee K. Pamula, R. Venkat
Institution: University of Nevada, Las Vegas
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2142346273