Year: 2009
Type: article
Abstract: We utilize the transient Harman technique to measure the thermoelectric figure of merit of thin films.A device structure is designed and fabricated to extract the thermoelectric properties of 20 m thick film composed of InGaAlAs semiconductor with embedded ErAs nanoparticles.High-speed voltage measurements with 63 dB of dynamic range and 200 ns resolution are achieved.Surface temperature measurements of the devices are used to extract the cross-plane Seebeck coefficient and thermal conductivity of the thermoelectric material.Self-consistent finite-element simulations of the three-dimensional temperature distributions in the active devices are in close agreement with the experimental thermal maps.
Source: Applied Physics Letters
DOI: 10.1063/1.3094880
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2142696570