Work

Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces

Year: 1980

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1980.20063

Authors: S.C. Sun, J.D. Plummer

Institution: Stanford University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2144545104

FWCI: 15.05

Cites: 35

Cited by: 695

Related to: 10