Work

Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

Year: 2015

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.4928730

Authors: Shihyun Ahn, Chen Dong, Weidi Zhu, Byung-Jae Kim, Ya-Hsi Hwang, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim, Erin Patrick, Brian Tracy, David J. Smith, Ivan I. Kravchenko

Institutions: University of Florida, Korea University, Arizona State University, Center for Nanophase Materials Sciences

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, U.S. Department of Defense, Office of Science, Division of Electrical, Communications and Cyber Systems

Awards: G5008918744, EAGER: Novel high electron mobility transistor designs

OpenAlex ID: W2144613106

FWCI: 0.932

Cites: 20

Cited by: 13

Related to: 10