Work

Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts

Year: 2010

Type: article

Abstract: We report in this work, the solution growth of heavily p-type doped 3C-SiC and 6H-SiC. Description of the 3C and 6H-SiC crystals in terms of defects and resistivity are presented and discussed with respect to growth conditions such as temperature, Al content in the melt and seed polarity. Crystals and thick layers are investigated by means of TEM, NDIC microscopy and Raman.

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.645-648.59

Authors: Frédéric Mercier, Irina G. Galben-Sandulache, Maya Marinova, Georgios Zoulis, Thierry Ouisse, Efstathios K. Polychroniadis, Didier Chaussende

Institutions: National Institute of Advanced Industrial Science and Technology, Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Micro and Nanotechnology Innovation Centre, Aristotle University of Thessaloniki, Université Montpellier 2

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funders: North Dakota Industrial Commission, Agence Nationale de la Recherche

OpenAlex ID: W2145069534

FWCI: 0.756

Cites: 8

Cited by: 4

Related to: 10