Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
Year: 1997
Type: article
Source: IEEE Electron Device Letters
DOI: 10.1109/55.568766
Authors: S.-H. Lo, D.A. Buchanan, Y. Taur, W. Wang
Institution: IBM Research - Thomas J. Watson Research Center
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2145633302