Trapping effects and microwave power performance in AlGaN/GaN HEMTs
Year: 2001
Type: article
Abstract: The dc small-signal, and microwave power output characteristics of AlGaN/GaN HEMTs are presented. A maximum drain current greater than 1 A/mm and a gate-drain breakdown voltage over 80 V have been attained. For a 0.4 /spl mu/m gate length, an f/sub T/ of 30 GHz and an f/sub max/ of 70 GHz have been demonstrated. Trapping effects, attributed to surface and buffer layers, and their relationship to microwave power performance are discussed. It is demonstrated that gate lag is related to surface trapping and drain current collapse is associated with the properties of the GaN buffer layer. Through a reduction of these trapping effects, a CW power density of 3.3 W/mm and a pulsed power density of 6.7 W/mm have been achieved at 3.8 GHz.
DOI: 10.1109/16.906437
Institution: United States Naval Research Laboratory
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2147521755