Work

SiC devices: physics and numerical simulation

Year: 1994

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/16.293319

Authors: M. Ruff, H. Mitlehner, R. Helbig

Institutions: Siemens (Germany), Friedrich-Alexander-Universität Erlangen-Nürnberg

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2147928622

FWCI: 20.61

Cites: 65

Cited by: 520

Related to: 10