Work

Radiation Effects in MOS Oxides

Year: 2008

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2008.2001040

Authors: James R. Schwank, Marty R. Shaneyfelt, Daniel M. Fleetwood, James A. Felix, Paul E. Dodd, Philippe Paillet, VÉronique Ferlet-Cavrois

Institutions: Sandia National Laboratories, Vanderbilt University, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA DAM Île-de-France

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2148071019

FWCI: 13.13

Cites: 145

Cited by: 1,017

Related to: 10