Work

Test structures for study of electron transport in nickel silicide features with line widths between 40 nm and 160 nm

Year: 2006

Type: conference-paper

Source: IEEE International Conference on Microelectronic Test Structures (ICMTS)

DOI: 10.1109/icmts.2006.1614266

Authors: Bin Li, Li Shi, JiPing Zhou, P.S. Ho, R.A. Allen, M.W. Cresswell

Institutions: The University of Texas at Austin, National Institute of Standards and Technology

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Institute of Standards and Technology

OpenAlex ID: W2148601765

FWCI: 3.033

Cites: 10

Cited by: 4

Related to: 10