Work

The resonant gate transistor

Year: 1967

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1967.15912

Authors: H.C. Nathanson, W.E. Newell, R.A. Wickstrom, J.R. Davis

Institution: Westinghouse Electric (United States)

Language: English

Topic: Advanced MEMS and NEMS Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2148935287

FWCI: 5.494

Cites: 12

Cited by: 1,092

Related to: 10