Work

GaN-based modulation doped FETs and UV detectors

Year: 2002

Type: article

Source: Solid-State Electronics

DOI: 10.1016/s0038-1101(01)00271-4

Authors: Hadis Morkoç, Aldo Di Carlo, Roberto Cingolani

Institutions: Virginia Commonwealth University, University of Rome Tor Vergata

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funders: National Science Foundation, Office of Naval Research, Air Force Office of Scientific Research

OpenAlex ID: W2149064298

FWCI: 9.427

Cites: 105

Cited by: 168

Related to: 10